Description

The SA-B1608-101-03JT is a high reliability gallium aluminum arsenide infrared emitting diode mounted in a miniature "pill" type hermetically sealed package. This package style is intended for direct mounting into PC boards. The device is processed to Optek's 100 percent screening program patterned after ESA/SCC Generic Specification No. 5000. Gallium aluminum arsenide features twice the radiated output of gallium arsenide at the same forward current. With a wavelength centered at 890 nanometers, it closely matches the spectral response of silicon phototransistors, such as Optek's OP600 high reliability series.

Specifications and features

• Processed to Optek's Military screening program patterned after ESA/SCC Generic Specification No. 5000
• Miniature hermetically sealed "pill" package
• Twice the power output of GaAs at the same drive current
• Mechanically and spectrally matched to the OP600 series phototransistor

Application Scenarios

The SA-B1608-101-03JT infrared emitting diode is commonly used in various applications, including (but not limited to):
- Electronics manufacturing
- Communication systems
- Industrial automation
- Security systems
- Automotive industry
- Medical devices

Comparison

Advantages:
- High reliability
- Increased radiated output compared to gallium arsenide
- Matches the spectral response of silicon phototransistors
- Can be directly mounted into PC boards
- Mechanically and spectrally matched to the OP600 series phototransistor

Disadvantages:
- None identified