Description

The FOD3182TSV is a high speed MOSFET gate drive optocoupler that has a 3A output current capacity. It is designed to drive power MOSFETs in various applications, including plasma display panels, motor control inverters, and high-performance DC/DC converters. It is composed of an aluminium gallium arsenide light-emitting diode that is optically joined to a CMOS detector with an integrated circuit power stage, which features PMOS and NMOS output power transistors.

Specifications and features

• 50kV/μs (Typ.) of common mode rejection at VCM = 2,000V
• Operating temperature range of -40°C to +100°C
• 3A peak output current
• Fast switching speed - 210ns max. propagation delay, 65ns max pulse width distortion
• Fast output rise/fall time - Lower dynamic power dissipation
• 250kHz maximum switching speed
• Wide VDD operating range: 10V to 30V
• Output voltage swing close to the supply rail (rail-to-rail output) enabled by the use of P-Channel MOSFETs at the output stage
• 5000Vrms, 1 minute isolation
• Under voltage lockout protection (UVLO) with hysteresis, optimized for driving MOSFETs
• UL and VDE*
• 1,414 peak working insulation voltage (VIORM)
• Minimum creepage distance of 8.0mm
• Minimum clearance distance of 10mm to 16mm (option TV or TSV)
• Minimum insulation thickness of 0.5mm

Application Scenarios

The FOD3182TSV is suitable for various applications including:

• Plasma Display Panel
• High performance DC/DC converter
• High-performance switch mode power supply
• High-performance uninterruptible power supply
• Isolated Power MOSFET gate drive

Comparison

• High noise immunity
• Wide VDD operating range
• Fast output rise/fall time
• Higher frequency driving of power MOSFETs
• Under voltage lockout protection with hysteresis optimized for driving MOSFETs
• UL and VDE*
• 1,414 peak working insulation voltage (VIORM)
• Minimum creepage distance of 8.0mm
• Minimum clearance distance of 10mm to 16mm (option TV or TSV)
• Minimum insulation thickness of 0.5mm

• None mentioned