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FDD306P - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FDD306P - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

In Stock:22140 ,Ready for Immediate Shipping
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In Stock: 22140, Ready for Immediate Shipping
Chipdatas Part No.:CD87-FDD306P
Manufacturer Part No.:FDD306P
Datecode:09+
Package:TO-252
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  • Description

    This is the FDD306P field effect tube (MOSFET) electronic component model. It uses Fairchild's advanced low voltage PowerTrench process and is optimized for battery power management.

    Specifications and features

    -6.7 A, -12 V. RDS(ON) = 28 mΩ @ VGS = -4.5 V RDS(ON) = 41 mΩ @ VGS = -2.5 V RDS(ON) = 90 mΩ @ VGS = -1.8 V

    Features:

    • Fast switching speed
    • High performance trench technology for extremely low RDS(ON)
    • High power and current handling capability

    Application Scenarios

    It is commonly used in DC/DC converters.

    Comparison

    Advantages

    - Advanced low voltage PowerTrench process

    - Optimized for battery power management

    - Fast switching speed

    - High performance trench technology for extremely low RDS(ON)

    - High power and current handling capability

    Disadvantages

    - Not suitable for applications outside of battery power management and DC/DC converters

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Single
    Series PowerTrench®
    Packaging Alternate Packaging
    Part-Aliases FDD306P_NL
    Unit-Weight 0.009184 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Technology Si
    Operating-Temperature -55°C ~ 175°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-252-3
    Configuration Single
    FET-Type MOSFET P-Channel, Metal Oxide
    Power-Max 1.6W
    Transistor-Type 1 P-Channel
    VDSS – Drain-Source Voltage 12V
    Input Capacitance 1290pF @ 6V
    FET-Feature Logic Level Gate, 1.8V Drive
    Current-Continuous-Drain-Id-25°C 6.7A (Ta)
    Rds-On-Max-Id-Vgs 28 mOhm @ 6.7A, 4.5V
    Vgs-th-Max-Id 1.5V @ 250μA
    Gate-Charge-Qg-Vgs 21nC @ 4.5V
    Pd-Power-Dissipation 52 W
    Maximum Operating Temperature + 175 C
    Operating temperature range - 55 C
    Fall-Time 41 ns
    Rise-Time 8 ns
    Vgs-Gate-Source-Voltage 8 V
    ID (drain current) 6.7 A
    Vds-Drain-Source-Breakdown-Voltage - 12 V
    Rds-On-Drain-Source-Resistance 28 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 34 ns
    Turn-On Delay Time 16 ns
    Channel-Mode Enhancement
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download FDD306P
  • Chipdatas Part: CD87-FDD306P
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/28 23:47 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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