NAND512R3A2SZA6E - Brand New Micron Technology Inc. Memory
-
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It has a density of 512 Mbits and operates with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. An Error Correction Code (ECC) is strongly recommended to extend the lifetime of NAND Flash devices. The use of ECC correction allows achieving up to 100,000 program/erase cycles for each block. A Write Protect pin is available to provide hardware protection against program and erase operations.
Specifications and features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost-effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don't care'
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK® packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation modelsApplication Scenarios
The NAND Flash 528 Byte/ 264 Word Page can be used in various applications such as:
- Mass storage devices
- Electronic devices requiring non-volatile memory
- Embedded systems
- Computer hardware
- Industrial automation
- Automotive electronicsComparison
Advantages- High density NAND Flash memory array
- Cost-effective solution for mass storage applications
- Multiplexed Address/ Data interface for reduced pin count
- Support for x 8 or x 16 bus width
- Error Correction Code (ECC) for extended lifetime and improved reliability
- Hardware Data Protection mechanisms
- Wide range of development tools availableDisadvantages- The NAND Flash 528 Byte/ 264 Word Page requires an additional hardware implementation for ECC correction to achieve maximum program/erase cycles
-
Similar parts: 9920 , Click to view
-
Datasheet
-
Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
- - Automatic Email notification (above 5 times)
- - View in your order page
Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
- - Automatic Email notification (above 5 times)
- - View in your order page
How to Buy:
- - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
- - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
- View more
Payment:
- - Paypal,Credit Card includes Visa, Master, American Express.
- - Wire transfer, include Local bank transfer.
- - Western Union.
- View more
-
Popular parts of the same kind
- Datasheet: Download NAND512R3A2SZA6E
- Chipdatas Part: CD93-NAND512R3A2SZA6E
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 14:10 +0800
-
- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
-
M25P80-VMN6TP - Brand New Micron Technology Inc. MemorySOP-8 -
MT48LC8M16A2P-6A:L - Brand New Micron Technology Inc. MemoryTSOP-54 -
M29W040B-90K1 - Brand New STMicroelectronics MemoryPLCC -
W25Q64BVSFIG - Brand New Winbond Electronics MemorySOP-16 -
PC28F128J3D-75 - Brand New INTEI MemoryBGA -
DS1225Y - Brand New Texas Instruments MemoryMOUDLE -
DS2431Q+T&R - Brand New Maxim Integrated Memory6-WDFN Exposed Pad -
IS61LV25616AL-10TLI - Brand New ISSI Memory44-TSOP 0.400", 10.16mm Width -
AT93C66B-XHM-T - Brand New Intel / Altera Memory8-TSSOP 0.173", 4.40mm Width -
AT24C128C-XHM-T - Brand New Intel / Altera MemoryTSSOP
-
The fee is charged according to the rule of PayPal.
-
The fee is charged according to the rule of PayPal.
-
Western Union charge US$0.00 banking fee.
-
We recommend to use bank transfer for large orders to save on handling fees.
-
DHL(www.dhl.com)
$40 limited time offer. -
UPS(www.ups.com)
$40 limited time offer. -
FedEx(www.fedex.com)
$40 limited time offer. -
Registered Mail(www.singpost.com)
Free shipping without minimum order.
