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NAND04GW3B2DN6E - Brand New STMicroelectronics Memory - Datasheet - Chipdatas

NAND04GW3B2DN6E - Brand New STMicroelectronics Memory

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Kategorie:Memory
Chipdatas Teilenummer:CD93-NAND04GW3B2DN6E
Hersteller-Teile-Nr.:NAND04GW3B2DN6E
Datumscode:09+
Paket:TSOP-48
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  • Summary description

    The NAND04GA3C2A and NAND04GW3C2A are a Multi-level Cell(MLC) devices from the NAND Flash 2112 Byte Page family of non-volatile Flash memories. The devices are offered in 1.8V and 3V VDDQ I/O power supplies. The core voltage is 3V VDD. The size of a Page is 2112 Bytes (2048 + 64 spare).

    Features

    ■ High density multi-level Cell (MLC) NAND Flash memories:
    – Up to 128 Mbit spare area
    – Cost effective solutions for mass storage applications
    ■ NAND interface
    – x8 bus width
    – Multiplexed Address/ Data
    ■ Supply voltages
    – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations.
    – VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers.
    ■ Page size: (2048 + 64 spare) Bytes
    ■ Block size: (256K + 8K spare) Bytes
    ■ Page Read/Program
    – Random access: 60µs (max)
    – Sequential access: 60ns(min)
    – Page Program Operation time: 800µs (typ)
    ■ Cache Read mode
    – Internal Cache Register to improve the read throughput
    ■ Fast Block Erase
    – Block erase time: 1.5ms (typ)
    ■ Status Register
    ■ Electronic Signature
    ■ Serial Number option
    ■ Chip Enable ‘don’t care’
    – for simple interface with microcontroller
    ■ Data Protection
    – Hardware Program/Erase locked during power transitions
    ■ Embedded Error Correction Code (ECC)
    – Internal ECC accelerator
    – Easy ECC Command Interface
    ■ Data integrity
    – 10,000 Program/Erase cycles (with ECC)
    – 10 years Data Retention
    ■ ECOPACK® package available
    ■ Development tools
    – Bad Blocks Management and Wear Leveling algorithms
    – File System OS Native reference software
    – Hardware simulation models

  • ähnliche Teile: 9920 , Klicke zum Zeigen
    Attribute Parameterwert
    Kategorie Memory
    Manufacturer STMicroelectronics
    Product Category Memory ICs
    Series -
    Packaging Tray
    Package-Case 48-TFSOP (0.724", 18.40mm Width)
    Operating-Temperature -40°C ~ 85°C (TA)
    Interface Parallel
    Voltage-Supply 2.7 V ~ 3.6 V
    Supplier-Device-Package 48-TSOP
    Memory Capacity 4G (512M x 8)
    Memory-Type FLASH - NAND
    Speed -
    Format-Memory FLASH
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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Weitere Informationen
  • Datasheet: Download NAND04GW3B2DN6E
  • Chipdaten Teil: CD93-NAND04GW3B2DN6E
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/06/03 12:36 +0800
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