Description

The RF2818 is an RF sub-micron MOSFET line designed for digital and analog cellular PCN and PCS base station applications. It operates at frequencies from 1000 to 2500 MHz and is characterized for Class A and Class AB operation at 26 volts in commercial and industrial applications. This model is part of the N-Channel Enhancement-Mode Lateral MOSFETs.

Specifications and features

• Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts:
  • Output Power — 4 Watts PEP
  • Power Gain — 11 dB
  • Efficiency — 30%
  • Intermodulation Distortion — –29 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

Application Scenarios

The RF2818 is specifically designed for use in digital and analog cellular PCN and PCS base station applications. It is suitable for frequencies ranging from 1000 to 2500 MHz and is characterized for Class A and Class AB operation at 26 volts. This model offers excellent thermal stability and can handle 10:1 VSWR, making it ideal for commercial and industrial applications.

Comparison

- High output power of 4 Watts PEP

- Power gain of 11 dB

- Efficiency of 30%

- Excellent thermal stability

- Capable of handling 10:1 VSWR

- Available in Tape and Reel packaging

- Limited frequency range of 1000 to 2500 MHz

- Requires 26 volts for operation