Si4356DY-T1-E3 - Brand New 10VISHAY IC Chips
In Stock:14460 ,Ready for Immediate Shipping
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In Stock:
14460,
Ready for Immediate Shipping
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Description
The Si4356DY-T1-E3 is an electronic component model that belongs to the IC Chips product category. It is a n-channel vertical DMOS with typical electrical characteristics. The subcircuit model is extracted and optimized for temperature ranges of -55 to 125°C with a pulsed 0-V to 10-V gate drive. The gate bias near the threshold voltage provides the best fit for the saturated output impedance. A gate-to-drain feedback capacitance network is used to model the gate charge characteristics, avoiding convergence difficulties of the switched Cgd model. The model parameter values are optimized to match the measured electrical data and may not represent the exact physical interpretation of the device.Specifications and features
- N-Channel Vertical DMOS - Macro Model (Subcircuit Model) - Level 3 MOS - Suitable for both linear and switching applications - Accurate over the -55 to 125°C temperature range - Models the Gate Charge, Transient, and Diode Reverse Recovery CharacteristicsApplication Scenarios
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Additional Information
- Datasheet: Download Si4356DY-T1-E3
- Chipdatas Part: CD93-Si4356DY-T1-E3
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/02 14:26 +0800
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