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SI7469DP-T1-GE3 - Brand New VISHAY Field Effect Tube (MOSFET) - Datasheet - Chipdatas

SI7469DP-T1-GE3 - Brand New VISHAY Field Effect Tube (MOSFET)

In Stock:50246 ,Ready for Immediate Shipping
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In Stock: 50246, Ready for Immediate Shipping
Brand:VISHAY
Chipdatas Part No.:CD87-SI7469DP-T1-GE3
Manufacturer Part No.:SI7469DP-T1-GE3
Datecode:09+
Package:QFN
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  • Description

    The SI7469DP-T1-GE3 is a Field Effect Tube, also known as a MOSFET, used in electronic circuits. This model is Halogen-free According to IEC 61249-2-21 available and features TrenchFET® Power MOSFETs. It is designed with a new Low Thermal Resistance PowerPAK® Package with a low profile of 1.07 mm.

    Specifications and features

    • Model: SI7469DP-T1-GE3
    • Product Category: Field Effect Tube (MOSFET)
    • Features: Halogen-free According to IEC 61249-2-21 Available, TrenchFET® Power MOSFETs, New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

    Application Scenarios

    The SI7469DP-T1-GE3 is commonly used in electronic circuit applications such as power supplies, voltage regulators, and switch mode power supplies for computers, televisions, and other electronic devices.

    Comparison

    Advantages
    • The SI7469DP-T1-GE3 is Halogen-free According to IEC 61249-2-21 available, which is beneficial for eco-friendly production.
    • The TrenchFET® Power MOSFETs in this model provide improved efficiency and reduced power consumption compared to traditional MOSFETs.
    Disadvantages
    • The SI7469DP-T1-GE3 may not be suitable for high voltage applications due to its low profile design.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer VISHAY
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI7469DP-GE3
    Unit-Weight 0.017870 oz
    Mounting-Style SMD/SMT
    Package-Case PowerPAKR SO-8
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package PowerPAKR SO-8
    Configuration Single
    FET-Type MOSFET P-Channel, Metal Oxide
    Power-Max 83W
    Transistor-Type 1 P-Channel
    VDSS – Drain-Source Voltage 80V
    Input Capacitance 4700pF @ 40V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 28A (Tc)
    Rds-On-Max-Id-Vgs 25 mOhm @ 10.2A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 160nC @ 10V
    Pd-Power-Dissipation 83 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 110 ns 100 ns
    Rise-Time 220 ns 25 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 28 A
    Vds-Drain-Source-Breakdown-Voltage - 80 V
    Rds-On-Drain-Source-Resistance 25 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 95 ns 105 ns
    Turn-On Delay Time 45 ns 15 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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Contact us
Additional Information
  • Datasheet: Download SI7469DP-T1-GE3
  • Chipdatas Part: CD87-SI7469DP-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/02 17:23 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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