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Description
The RF5355SB is a power field effect transistor (FET) that falls under the category of IC chips. It is an N-channel enhancement-mode silicon gate TMOS power FET with a current rating of 14 amperes and a voltage rating of 100 volts. The RDS(on), which represents the resistance between the drain and source when the FET is switched on, is 0.140 Ω.
Specifications and Features
- Product Category: IC Chips
- Transistor Type: N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET
- Current Rating: 14 Amperes
- Voltage Rating: 100 Volts
- RDS(on) (Resistance between Drain and Source when FET is ON): 0.140 Ω
Application Scenarios
The RF5355SB power FET can be used in various electronic devices and circuits that require high power switching operations. It is commonly used in applications such as power amplifiers, motor controls, lighting systems, and power converters.
Comparison
Advantages- High current and voltage ratings
- Low ON-state resistance
- Enhancement-mode operation
- Silicon gate technology
DisadvantagesNo significant disadvantages have been reported for the RF5355SB power FET.
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Datenblatt
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Shopping guide
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Weitere Informationen
- Datasheet: Download RF5355SB
- Chipdaten Teil: CD87-RF5355SB
- Lagerhaus: China, Hongkong
- Versenden: Innerhalb von 24 Stunden
- Kostenloser Versand: Yes
- Bevorzugter Versand: Yes, 3-5 days
- Letzte Aktualisierung: 2024/09/08 09:03 +0800
Refund
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