Description

The S25FL016A1F is a 3.0 Volt (2.7V to 3.6V) Flash memory device that belongs to the IC Chips product category. It consists of thirty-two sectors, with each sector having 512 Kb memory. This device accepts data written to the Serial Input (SI) and outputs data on the Serial Output (SO). It can be programmed in-system using the standard 3.0 volt VCC supply. The memory can be programmed from 1 to 256 bytes at a time, and it supports Sector Erase and Bulk Erase commands. The S25FL016A1F requires only a 3.0 volt power supply for both read and write functions, eliminating the need for a VPP supply. The device provides internally generated and regulated voltages for program operations.

Specifications and features

- Single power supply operation within the voltage range of 2.7V to 3.6V for read and program operations

- Memory Architecture: Thirty-two sectors with 512 Kb each

- Program operations: Page Program (up to 256 bytes) in 1.4 ms (typical)

- Erase operations: 0.5 s typical sector erase time, 10 s typical bulk erase time

- Cycling Endurance: 100,000 cycles per sector typical

- Data Retention: 20 years typical

- Device ID: JEDEC standard two-byte electronic signature, RES command one-byte electronic signature for backward compatibility

- Manufactured on 0.20 µm MirrorBit® process technology

- Package Options: 16-pin SO package (300 mils), 8-pin SO package (208 mils), 8-Contact WSON Package (6x8 mm), Pb Free

Application Scenarios

- Suitable for applications that require 3.0 Volt Flash memory with a single power supply

- Commonly used in electronic devices that require high-speed data storage and retrieval

Comparison

- Single power supply operation simplifies circuit design

- High cycling endurance of 100,000 cycles per sector

- Long data retention period of 20 years

- Compatible with SPI Bus Serial Interface

- Limited memory capacity of 512 Kb per sector