GENERAL DESCRIPTION

The Am29LV128MH/L is a 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 volt read, erase, and program operations
■ VersatileI/O™ control
— Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS

■ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 s typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 56-pin TSOP
— 64-ball Fortified BGA

**SOFTWARE & HARDWARE FEATURES **

■ Software features
— Program Suspend & Resume: read other sectors before programming operation is completed
— Erase Suspend & Resume: read/program other sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
— Sector Group Protection: hardware-level method of preventing write operations within a sector group
— Temporary Sector Group Unprotect: VID-level method of changing code in locked sector groups
— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or erase cycle completion