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W631GG8KB-15 - Brand New Winbond Electronics Memory - Datasheet - Chipdatas

W631GG8KB-15 - Brand New Winbond Electronics Memory

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In Stock: 1504, Ready for Immediate Shipping
Category:Memory
Chipdatas Part No.:CD93-W631GG8KB-15
Manufacturer Part No.:W631GG8KB-15
Datecode:09+
Package:78-TFBGA
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  • Description

    The W631GG8KB-15 is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. It is categorized as a memory component.

    Specifications and features

    • Power Supply: VDD, VDDQ = 1.5V ± 0.075V
    • Double Data Rate architecture: two data transfers per clock cycle
    • Eight internal banks for concurrent operation
    • 8 bit prefetch architecture
    • CAS Latency: 6, 7, 8, 9, 10, 11 and 13
    • Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-The-Fly (OTF)
    • Programmable read burst ordering: interleaved or nibble sequential
    • Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
    • Edge-aligned with read data and center-aligned with write data
    • DLL aligns DQ and DQS transitions with clock
    • Differential clock inputs (CK and CK#)
    • Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
    • Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
    • Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
    • Auto-precharge operation for read and write bursts
    • Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
    • Precharged Power Down and Active Power Down

    Application Scenarios

    The W631GG8KB-15 can be used in various applications where high speed transfer rates and reliable data storage are required. It is suitable for devices that need DDR3 SDRAM memory, such as computer systems, servers, and networking equipment.

    Comparison

    Advantages

    - High speed transfer rates of up to 1866 Mb/sec/pin

    - Supports various speed grades for different application requirements

    - Double Data Rate architecture allows for faster data transfers

    - Eight internal banks enable concurrent operation

    Disadvantages

    - Requires a power supply of VDD, VDDQ = 1.5V ± 0.075V

    - Limited CAS Latency options

    - Specific burst length and burst chop modes

  • Similar parts: 9920 , Click to view
    Attributes Value
    Category Memory
    Manufacturer Winbond Electronics
    Product Category Memory ICs
    Series -
    Packaging Tray Alternate Packaging
    Package-Case 78-TFBGA
    Operating-Temperature 0°C ~ 95°C (TC)
    Interface Parallel
    Voltage-Supply 1.425 V ~ 1.575 V
    Supplier-Device-Package 78-WBGA (10.5x8)
    Memory Capacity 1G (128M x 8)
    Memory-Type DDR3 SDRAM
    Speed 667MHz
    Format-Memory RAM
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download W631GG8KB-15
  • Chipdatas Part: CD93-W631GG8KB-15
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 15:21 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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