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FQPF9N50C - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQPF9N50C - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

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In Stock: 419708, Ready for Immediate Shipping
Chipdatas Part No.:CD90-FQPF9N50C
Manufacturer Part No.:FQPF9N50C
Datecode:09+
Package:TO-220F
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  • Description

    The FQPF9N50C is a Field Effect Tube (MOSFET) electronic component model which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. These transistors are specially designed to minimize on-state resistance, provide superior switching performance and withstand high energy pulse. They are well-suited for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on the half-bridge topology.

    Specifications and Features

    • Product Category: Field Effect Tube (MOSFET)
    • Model Number: FQPF9N50C
    • Current Rating: 9 A
    • Voltage Rating: 500V
    • RDS(on)= 0.8 Ω @ VGS= 10 V
    • Low gate charge (typical 28 nC)
    • Low Crss (typical 24 pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability

    Application Scenarios

    The FQPF9N50C is ideal for use in the following applications:

    • High-efficiency switched-mode power supplies
    • Active power factor correction
    • Electronic lamp ballasts based on half-bridge topology.

    Comparison

    Advantages

    • The FQPF9N50C has a low on-state resistance.
    • It offers superior switching performance compared to other transistors.
    • These transistors withstand high energy pulse in the avalanche and commutation mode.
    • Improved dv/dt capability.

    Disadvantages

    • Not suitable for low-voltage applications.
    • These transistors are not ideal for circuits requiring a high amount of current.
    • Cost is higher than other MOSFETs.

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Single
    Packaging Tube
    Part-Aliases FQPF9N50C_NL
    Unit-Weight 0.080072 oz
    Mounting-Style Through Hole
    Package-Case TO-220-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 44 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 64 ns
    Rise-Time 65 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 9 A
    Vds-Drain-Source-Breakdown-Voltage 500 V
    Rds-On-Drain-Source-Resistance 800 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 93 ns
    Turn-On Delay Time 18 ns
    Transconductance 6.5 S
    Channel-Mode Enhancement
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download FQPF9N50C
  • Chipdatas Part: CD90-FQPF9N50C
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/02 07:35 +0800
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    • Full or Partial Refund , If the item is not as described
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