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Description
RF3232TR is a high-power MOSFET designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. It is a single-channel N-channel enhancement mode silicon gate power field effect transistor that is capable of withstanding a specified level of energy in the breakdown avalanche mode of operation. The device is rated for 2.8A and 3.3A, 350V and 400V, with rDS(ON)= 1.8 ohm and 2.5 ohm. These types of MOSFETs can be operated directly from integrated circuits.
Specifications and Features
- 2.8A and 3.3A, 350V and 400V
- rDS(ON) = 1.8 ohm and 2.5 ohm
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Application Scenarios
The RF3232TR MOSFET is an ideal choice for various applications such as:
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
- Drivers for high power bipolar switching transistors requiring high speed and low gate drive power
Comparison
Advantages- Capable of withstanding a specified level of energy in the breakdown avalanche mode of operation
- High input impedance
- Nanosecond switching speeds with linear transfer characteristics
Disadvantages- Not ideal for low voltage switching applications
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Datasheet
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Additional Information
- Datasheet: Download RF3232TR
- Chipdatas Part: CD88-RF3232TR
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/01 16:26 +0800
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