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IRFH5302TRPBF - Brand New IR Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IRFH5302TRPBF - Brand New IR Field Effect Tube (MOSFET)

In Stock:28867 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 28867, Ready for Immediate Shipping
Brand:IR
Chipdatas Part No.:CD93-IRFH5302TRPBF
Manufacturer Part No.:IRFH5302TRPBF
Datecode:09+
Package:8-PowerVDFN
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  • Description

    Electronic Component Model:IRFH5302TRPBF is a Field Effect Tube (MOSFET) that has various features and benefits. It is a low profile component with a height of less than 0.9 mm and has an industry-standard pinout. It is compatible with existing surface mount techniques and is RoHS compliant, containing no lead, no bromide, and no halogen. It has low RDSon (<2.5mΩ) and a Schottky intrinsic diode with a low forward voltage. It also has low thermal resistance to PCB (<1.2°C/W) and has undergone 100% Rg testing. It is MSL1, Industrial Qualification.

    Specifications and features

    - Low RDSon (<2.5mΩ) - Schottky intrinsic diode with low forward voltage - Low thermal resistance to PCB (<1.2°C/W) - 100% Rg tested - Low profile (<0.9 mm) - Industry-Standard Pinout - Compatible with Existing Surface Mount Techniques - RoHS Compliant Containing no Lead, no Bromide and no Halogen - MSL1, Industrial Qualification

    Application Scenarios

    - Synchronous MOSFET for high frequency buck converters

    Comparison

    Advantages
    - Lower Conduction Losses - Lower Switching Losses - Increased Power Density - Increased Reliability - Multi-Vendor Compatibility - Easier Manufacturing - Environmentally Friendlier
    Disadvantages
    - No specific disadvantages mentioned
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IR
    Product Category FETs - Single
    Packaging Reel
    Mounting-Style SMD/SMT
    Package-Case PQFN-8
    Technology Si
    Number-of-Channels 1 Channel
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 100 W
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 100 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 2.1 mOhms
    Transistor-Polarity N-Channel
    Qg-Gate-Charge 29 nC
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Additional Information
  • Datasheet: Download IRFH5302TRPBF
  • Chipdatas Part: CD93-IRFH5302TRPBF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 08:22 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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  • The fee is charged according to the rule of PayPal.
  • Western Union charge US$0.00 banking fee.
  • We recommend to use bank transfer for large orders to save on handling fees.
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