Description

The MBM29DL800BA-70PBTSQF4E1 is an 8M-bit, 3.0 V-only Flash memory that can be organized as 1M bytes of 8 bits each or 512K words of 16 bits each. It is designed to be programmed in-system with a standard 3.0 V voltage supply, eliminating the need for additional voltage requirements. It is offered in a 48-pin TSOP(I) and 48-ball FBGA packages, making it compatible with JEDEC-standard world-wide pinouts.

Specifications and features

- Single 3.0 V read, program, and erase, minimizing system level power requirements.
- Simultaneous operations, allowing for Read-while-Erase or Read-while-Program.
- Compatible with JEDEC-standard commands and software commands as E2PROMs.
- Minimum of 100,000 program/erase cycles.
- High performance with 70 ns maximum access time.
- Sector erase architecture with a variety of sector sizes.
- Boot Code Sector Architecture for easy access.
- Embedded EraseTM Algorithms for efficient pre-programming and erasing.
- Embedded ProgramTM Algorithms for automatic data writing and verification.
- Data Polling and Toggle Bit feature for detection of program or erase cycle completion.
- Ready/Busy output for hardware detection of cycle completion.
- Automatic sleep mode for low power consumption when addresses remain stable.
- Low VCC write inhibit of ≤ 2.5 V.
- Erase Suspend/Resume feature for interrupting erase operation.
- Sector protection and Sector Protection Set function for enhanced security.
- Fast Programming Function for accelerated programming.
- Temporary sector unprotection via the RESET pin.

Application Scenarios

The MBM29DL800BA-70PBTSQF4E1 can be used in various electronic devices such as computers, automotive systems, consumer electronics, and industrial equipment. Its compatibility with different sector sizes and protection functions make it versatile for different application scenarios.

Comparison

- Single 3.0 V voltage supply, minimizing power requirements.

- None identified.