Description

The W631GG6KB is a 1G bit DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high-speed transfer rates up to 1866 Mb/sec/pin for various applications. It is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A, and 15K. The -11 speed grade is compliant with the DDR3-1866(13-13-13) specification. The -12, 12I, 12A, and 12K speed grades are compliant with the DDR3-1600(11-11-11) specification, and the -15, 15I, 15A, and 15K speed grades are compliant with the DDR3-1333(9-9-9) specification. The W631GG6KB is primarily used in integrated circuit (IC) chips and is suitable for various applications.

Specifications and features

• Power Supply: VDD, VDDQ = 1.5V ± 0.075V
• Double Data Rate architecture: two data transfers per clock cycle
• Eight internal banks for concurrent operation
• 8 bit prefetch architecture
• CAS Latency: 6, 7, 8, 9, 10, 11, and 13
• Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
• Programmable read burst ordering: interleaved or nibble sequential
• Bi-directional, differential data strobes (DQS and DQS#) are transmitted/received with data
• Edge-aligned with read data and center-aligned with write data
• DLL aligns DQ and DQS transitions with clock
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge, data, and data mask are referenced to both edges of a differential data strobe pair (double data rate)
• Posted CAS with programmable additive latency (AL = 0, CL - 1, and CL - 2) for improved command, address, and data bus efficiency
• Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
• Auto-precharge operation for read and write bursts
• Refresh, Self-Refresh, Auto Self-refresh (ASR), and Partial array self-refresh (PASR)
• Precharged Power Down and Active Power Down

Application Scenarios

The W631GG6KB is primarily used in integrated circuit (IC) chips and is suitable for various applications that require high-speed transfer rates.

Comparison

• High-speed transfer rates up to 1866 Mb/sec/pin
• Compliant with multiple DDR3 specifications for versatility in different applications
• Programmable features for improved efficiency in command, address, and data bus efficiency

• May not be compatible with applications that require specific DDR3 specifications that are not supported