Description

ST3401M23RG is a P-Channel logic enhancement mode power field effect transistor produced using high cell density DMOS trench technology. This transistor is specifically designed to minimize on-state resistance and is well-suited for low voltage applications such as cellular phone and notebook computer power management, as well as other battery-powered circuits where low in-line power loss is required. The product is packaged in a very small outline surface mount package.

Specifications and features

-30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V

-30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.5V

Super high density cell design for extremely low RDS(ON)

Exceptional on-resistance and maximum DC current capability

SOT-23-3L package design

Application Scenarios

This transistor is particularly suited for low voltage applications such as cellular phone and notebook computer power management. It can also be used in other battery-powered circuits where low in-line power loss is required.

Comparison