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Description
ST3401M23RG is a P-Channel logic enhancement mode power field effect transistor produced using high cell density DMOS trench technology. This transistor is specifically designed to minimize on-state resistance and is well-suited for low voltage applications such as cellular phone and notebook computer power management, as well as other battery-powered circuits where low in-line power loss is required. The product is packaged in a very small outline surface mount package.
Specifications and features
-30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V
-30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application Scenarios
This transistor is particularly suited for low voltage applications such as cellular phone and notebook computer power management. It can also be used in other battery-powered circuits where low in-line power loss is required.
Comparison
AdvantagesNoneDisadvantagesNone -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download ST3401M23RG
- Chipdatas Part: CD87-ST3401M23RG
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/02 07:42 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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