DESCRIPTION

The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

■ 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 55ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-byand Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29F200T: 00D3h
– Device Code, M29F200B: 00D4h