Description

These N-Channel power MOSFETs, model HUF76121, are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. The HUF76121 is capable of withstanding high energy in the avalanche mode, and its diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Specifications and features

• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.023Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

Application Scenarios

This model of MOSFET is suitable for various applications, including:

• Switching regulators
• Switching converters
• Motor drivers
• Relay drivers
• Low-voltage bus switches
• Power management in portable and battery-operated products

Comparison

The HUF76121 MOSFET has several advantages and disadvantages:

• Low on-resistance
• High energy withstand capability
• Low reverse recovery time and stored charge
• Logic level gate drive
• Temperature compensating models available
• Thermal impedance models available
• Peak current vs pulse width curve available
• UIS rating curve available

• None