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STW70N60M2 - Brand New STMicroelectronics Field Effect Tube (MOSFET) - Datasheet - Chipdatas

STW70N60M2 - Brand New STMicroelectronics Field Effect Tube (MOSFET)

In Stock:386 ,Ready for Immediate Shipping
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In Stock: 386, Ready for Immediate Shipping
Chipdatas Part No.:CD86-STW70N60M2
Manufacturer Part No.:STW70N60M2
Datecode:09+
Package:TO-247-3
$6.50340 /PCS Each contains 0 PCS
≥1:
$6.50340
≥10:
$6.43836
≥50:
$6.37333
≥100:
$6.17823
Numbers (PCS) :
  • Description

    This is the STW70N60M2 model, a Field Effect Tube (MOSFET) electronic component. This Power MOSFET series has been designed by STMicroelectronics using their unique STripFET™ process, which minimizes input capacitance and gate charge, making it suitable as a primary switch in advanced high-efficiency isolated DC-DC converters.

    Specifications and features

    • Exceptional dv/dt capability
    • Low gate charge
    • 100% Avalanche tested

    Application Scenarios

    The STW70N60M2 is suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters.

    Comparison

    Advantages
    • Unique STripFET™ process minimizes input capacitance and gate charge
    • Exceptional dv/dt capability
    • Low gate charge
    • 100% Avalanche tested
    Disadvantages
    • None identified
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer STMicroelectronics
    Product Category FETs - Single
    Series MDmesh™ II Plus
    Packaging Tube
    Unit-Weight 1.340411 oz
    Mounting-Style Through Hole
    Package-Case TO-247-3
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-247
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 450W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 600V
    Input Capacitance 5200pF @ 100V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 68A (Tc)
    Rds-On-Max-Id-Vgs 40 mOhm @ 34A, 10V
    Vgs-th-Max-Id 4V @ 250μA
    Gate-Charge-Qg-Vgs 118nC @ 10V
    Pd-Power-Dissipation 450 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 9 ns
    Rise-Time 17 ns
    Vgs-Gate-Source-Voltage 25 V
    ID (drain current) 68 A
    Vds-Drain-Source-Breakdown-Voltage 600 V
    Vgs-th-Gate-Source-Threshold-Voltage 3 V
    Rds-On-Drain-Source-Resistance 30 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 155 ns
    Turn-On Delay Time 32 ns
    Qg-Gate-Charge 118 nC
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download STW70N60M2
  • Chipdatas Part: CD86-STW70N60M2
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 19:03 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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