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HUF75344G3 - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

HUF75344G3 - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

In Stock:26444 ,Ready for Immediate Shipping
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In Stock: 26444, Ready for Immediate Shipping
Chipdatas Part No.:CD93-HUF75344G3
Manufacturer Part No.:HUF75344G3
Datecode:09+
Package:TO-247-3
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PCS
  • **These N-Channel power MOSFETs are manufactured using the innovative

    UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.**

    Features
    • 75A, 55V
    • Simulation Models
    - Temperature Compensated PSPICE® and SABER™
    Models
    - Thermal Impedance PSPICE and SABER Models
    Available on the web at: www.fairchildsemi.com
    • Peak Current vs Pulse Width Curve
    • UIS Rating Curve
    • Related Literature
    - TB334, “Guidelines for Soldering Surface Mount
    Components to PC Boards”

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Single
    Series UltraFET
    Packaging Tube
    Part-Aliases HUF75344G3_NL
    Unit-Weight 0.225401 oz
    Mounting-Style Through Hole
    Package-Case TO-247-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 285 W
    Maximum Operating Temperature + 175 C
    Operating temperature range - 55 C
    Fall-Time 57 ns
    Rise-Time 125 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 75 A
    Vds-Drain-Source-Breakdown-Voltage 55 V
    Rds-On-Drain-Source-Resistance 8 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 46 ns
    Turn-On Delay Time 13 ns
    Channel-Mode Enhancement
  • Latest 5 Reviews
    0 buyers commented on the product
  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
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    • - View in your order page
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    How to Buy:
    • - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
    • View more
    Payment:
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    • - Wire transfer, include Local bank transfer.
    • - Western Union.
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Contact us
Additional Information
  • Datasheet: Download HUF75344G3
  • Chipdatas Part: CD93-HUF75344G3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 06:23 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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Payment Method
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  • The fee is charged according to the rule of PayPal.
  • Western Union charge US$0.00 banking fee.
  • We recommend to use bank transfer for large orders to save on handling fees.
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