Description

The CY2CC18100C is a high-breakdown voltage Gallium Arsenide Field Effect Transistor (GaAs FET) that is ideal for portable Power Amplifier (PA) applications in various devices such as mobile phones, WLAN transceivers, basestations, and antenna amplifiers. It exhibits excellent linearity and power added efficiencies of up to 55%. Its maximum output power is +23.5 dBm for a supply voltage of 3V and frequency of 1.8 GHz with an associated gain of 14.5 dB, making it suitable for applications in the frequency range of 400 MHz to 3 GHz.

Specifications and features

• Product Category: IC Chips
• Type: Gallium Arsenide Field Effect Transistor (GaAs FET)
• Frequencies: Up to 3 GHz
• Operating Voltage Range: 2 to 6V
• Output Power (+23.5 dBm typical): VD=3V, f=1.8GHz
• Efficiency: Better than 55%
• Noise figure (Nfmin): 0.79 dB typical at 900 MHz
• Cost: Low

Application Scenarios

The CY2CC18100C can be used as a Power Amplifier for WLAN transceivers and as a Driver Amplifier for WLAN or mobile phone basestations. It is also suitable as a Low Noise Amplifier for basestations and antenna amplifiers.

Comparison

• High-breakdown voltage
• Easy matching and excellent linearity
• Power added efficiencies up to 55%
• Low noise figure
• Cost-effective

• Not suitable for frequencies above 3 GHz
• Operating voltage range may not be suitable for some applications