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Description
The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.
Specifications and features
- Fast cycle time (Cycle) (Frequency)
- CXK77B1810AGB-5 5ns 200MHz
- -6 6ns 167MHz
- Inputs and outputs are GTL/HSTL compatible
- Controlled Impedance Driver
- Single 3.3V power supply: 3.3V±0.15V
- Byte-write possible
- OE asynchronization
- JTAG test circuit
- Package 119TBGA
- 4 kinds of synchronous operation mode
- Register-Register mode (R-R mode)
- Register-Flow Thru mode (R-F mode)
- Register-Latch mode (R-L mode)
- Dual clock mode (D-C mode)
Application Scenarios
This electronic component model is suitable for applications that require high-speed, large-capacity and low-power consumption static RAM. Such as:
- Telecommunications
- Networking equipment
- Embedded systems
Comparison
Advantages- High speed
- Large capacity
- Low power consumption
Disadvantages- Not suitable for applications that require dynamic RAM
- The cost is generally higher than that of ordinary DRAM
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Additional Information
- Datasheet: Download CXK77B1810AGB-6
- Chipdatas Part: CD86-CXK77B1810AGB-6
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/02 11:08 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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