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Description
The CXK77B1810AGB-6 is a high-speed 1M bit Bi-CMOS synchronous static RAM designed to organize 65536 words by 18 bits. This SRAM integrates input registers, high-speed SRAM, and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.
Specifications and Features
- Fast cycle time (Cycle) (Frequency):
- CXK77B1810AGB-5: 5ns, 200MHz
- CXK77B1810AGB-6: 6ns, 167MHz
- Inputs and outputs are GTL/HSTL compatible
- Controlled Impedance Driver
- Single 3.3V power supply: 3.3V±0.15V
- Byte-write possible
- OE asynchronization
- JTAG test circuit
- Package 119TBGA
- Four kinds of synchronous operation mode:
- Register-Register mode (R-R mode)
- Register-Flow Thru mode (R-F mode)
- Register-Latch mode (R-L mode)
- Dual clock mode (D-C mode)
Application Scenarios
The CXK77B1810AGB-6 can be used in various electronic devices such as computers, communication equipment, and gaming devices.
Comparison
Advantages- High-speed operation
- Integration of input registers, high-speed SRAM and write buffer for efficient performance
- Multiple synchronous operation modes for flexible usage
Disadvantages- Relatively high power consumption for a single IC
- May not be suitable for low-power devices
- Fast cycle time (Cycle) (Frequency):
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Additional Information
- Datasheet: Download CXK77B1810AGB-6
- Chipdatas Part: CD86-CXK77B1810AGB-6
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/02 11:21 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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