Description

The IR51H(D)XXX are complete high voltage, high speed, selfoscillating half- bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge.

Features

• Output Power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
• Internal oscillator with programmable frequency
• 15.6V Zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• Micropower startup