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Description
The RJP63K2 is an IC chip, belonging to the G6H-II series, and utilizes trench gate and thin wafer technology. It has a low collector to emitter saturation voltage of VCE(sat)= 1.9 V typ and high speed switching at tr= 60 ns typ, and tf= 200 ns typ. The RJP63K2 also has low leak current of ICES= 1 μA max and is packaged in an isolated TO-220FL package.
Specifications and features
- Product: RJP63K2 IC Chip
- Product Category: IC Chips
- Technology: Trench gate and thin wafer technology (G6H-II series)
- Collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
- Switching speed: tr= 60 ns typ, tf= 200 ns typ
- Leak current: ICES= 1 μA max
- Package: TO-220FL
Application Scenarios
The RJP63K2 can be used in a variety of applications where high-speed switching and low-leak current are required, including power supplies, inverters, and motor control circuits.
Comparison
Advantages- Trench gate and thin wafer technology for improved performance
- Low collector to emitter saturation voltage for reduced power loss
- High-speed switching for improved efficiency
- Low leak current for improved reliability
Disadvantages- Not suitable for high voltage applications
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download RJP63K2
- Chipdatas Part: CD87-RJP63K2
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 10:50 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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