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IRLR3105TRLPBF - Brand New IR Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IRLR3105TRLPBF - Brand New IR Field Effect Tube (MOSFET)

In Stock:17903 ,Ready for Immediate Shipping
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In Stock: 17903, Ready for Immediate Shipping
Brand:IR
Chipdatas Part No.:CD93-IRLR3105TRLPBF
Manufacturer Part No.:IRLR3105TRLPBF
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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  • Description

    This HEXFET® Power MOSFET model IRLR3105TRLPBF is designed with the latest processing techniques to achieve a remarkably low on-resistance per silicon area. It is capable of operating at a junction temperature of up to 175°C, offering fast switching speed and improved repetitive avalanche rating. The design of this MOSFET makes it highly efficient and reliable for a wide range of applications. The D-Pak package allows for surface mounting using various techniques like vapor phase, infrared, or wave soldering. The straight lead version (IRLU series) is specifically designed for through-hole mounting applications. It is capable of dissipating power levels of up to 1.5 watts in typical surface mount applications.

    Specifications and features

    The IRLR3105TRLPBF MOSFET comes with the following specifications and features:

    • Logic-Level Gate Drive
    • Advanced Process Technology
    • Ultra Low On-Resistance
    • 175°C Operating Temperature
    • Fast Switching
    • Repetitive Avalanche Allowed up to Tjmax
    • Lead-Free

    Application Scenarios

    The IRLR3105TRLPBF MOSFET can be used in various applications, including:

    • Power electronics
    • Switching applications
    • Motor control
    • Inverters
    • Renewable energy systems
    • Industrial automation

    Comparison

    Advantages:

    • Extremely low on-resistance per silicon area
    • 175°C junction operating temperature
    • Fast switching speed
    • Improved repetitive avalanche rating

    Disadvantages:

    • Not suitable for high-power applications beyond 1.5 watts
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IR
    Product Category FETs - Single
    Mfr Infineon Technologies
    Series HEXFET®
    Package Tape & Reel (TR)
    Product-Status -
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 55 V
    Current-Continuous-Drain-Id-25°C 25A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 5V 10V
    Rds-On-Max-Id-Vgs 37mOhm @ 15A 10V
    Vgs-th-Max-Id 3V @ 250µA
    Gate-Charge-Qg-Max-Vgs 20 nC @ 5 V
    Vgs-Max ±16V
    Input-Capacitance-Ciss-Max-Vds 710 pF @ 25 V
    FET-Feature -
    Power-Dissipation-Max 57W (Tc)
    Operating-Temperature -55°C ~ 175°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package D-Pak
    Package-Case TO-252-3 DPak (2 Leads + Tab) SC-63
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download IRLR3105TRLPBF
  • Chipdatas Part: CD93-IRLR3105TRLPBF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 20:49 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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