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FDN335N - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FDN335N - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:378 ,Ready for Immediate Shipping
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In Stock: 378, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD94-FDN335N
Manufacturer Part No.:FDN335N
Datecode:09+
Package:SOT-23
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  • Description

    This is the FDN335N, an N-Channel 2.5V specified MOSFET produced by Fairchild Semiconductors using their advanced PowerTrench process. It is designed to minimize on-state resistance and maintain low gate charge for superior switching performance.

    Specifications and features

    - 1.7 A, 20 V

    - RDS(ON) = 0.07 Ω @ VGS = 4.5 V

    - RDS(ON) = 0.100 Ω @ VGS = 2.5 V

    - Low gate charge (3.5nC typical)

    - High performance trench technology for extremely low RDS(ON)

    - High power and current handling capability

    Application Scenarios

    - DC/DC converter

    - Load switch

    Comparison

    Advantages
    None
    Disadvantages
    None
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer onsemi
    Product Category FETs - Single
    Series PowerTrench®
    Packaging Alternate Packaging
    Part-Aliases FDN335N_NL
    Unit-Weight 0.001058 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package SuperSOT-3
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 460mW
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 310pF @ 10V
    FET-Feature Logic Level Gate, 2.5V Drive
    Current-Continuous-Drain-Id-25°C 1.7A (Ta)
    Rds-On-Max-Id-Vgs 70 mOhm @ 1.7A, 4.5V
    Vgs-th-Max-Id 1.5V @ 250μA
    Gate-Charge-Qg-Vgs 5nC @ 4.5V
    Pd-Power-Dissipation 500 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 8.5 ns
    Rise-Time 8.5 ns
    Vgs-Gate-Source-Voltage 8 V
    ID (drain current) 1.7 A
    Vds-Drain-Source-Breakdown-Voltage 20 V
    Rds-On-Drain-Source-Resistance 55 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 11 ns
    Turn-On Delay Time 5 ns
    Transconductance 7 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download FDN335N
  • Chipdatas Part: CD94-FDN335N
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/12 23:48 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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