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STQ2HNK60ZR-AP - Brand New STMicroelectronics Field Effect Tube (MOSFET) - Datasheet - Chipdatas

STQ2HNK60ZR-AP - Brand New STMicroelectronics Field Effect Tube (MOSFET)

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Chipdatas Part No.:CD93-STQ2HNK60ZR-AP
Manufacturer Part No.:STQ2HNK60ZR-AP
Datecode:09+
Package:TO-226-3, TO-92-3 TO-226AA Formed Leads
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  • Description

    The STQ2HNK60ZR-AP is an N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH™ MOSFET. It belongs to the SuperMESH™ series which is the result of an extreme optimization of ST’s PowerMESH™ layout. This series offers significantly reduced on-resistance and excellent dv/dt capability, making it suitable for demanding applications. The STQ2HNK60ZR-AP complements ST's full range of high voltage MOSFETs, including the revolutionary MDmesh™ products.

    Specifications and features

    - TYPICAL RDS(on): 4.4Ω

    - EXTREMELY HIGH dv/dt CAPABILITY

    - ESD IMPROVED CAPABILITY

    - 100% AVALANCHE TESTED

    - NEW HIGH VOLTAGE BENCHMARK

    - GATE CHARGE MINIMIZED

    Application Scenarios

    - AC ADAPTORS AND BATTERY CHARGERS

    - SWITCH MODE POWER SUPPLIES (SMPS)

    Comparison

    Advantages
    None
    Disadvantages
    None
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer STMicroelectronics
    Product Category FETs - Single
    Series SuperMESH™
    Packaging Cut Tape (CT)
    Unit-Weight 0.007760 oz
    Mounting-Style Through Hole
    Package-Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-92-3
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 3W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 600V
    Input Capacitance 280pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 500mA (Tc)
    Rds-On-Max-Id-Vgs 4.8 Ohm @ 1A, 10V
    Vgs-th-Max-Id 4.5V @ 50μA
    Gate-Charge-Qg-Vgs 15nC @ 10V
    Pd-Power-Dissipation 3 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 50 ns
    Rise-Time 30 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 500 mA
    Vds-Drain-Source-Breakdown-Voltage 600 V
    Rds-On-Drain-Source-Resistance 4.8 Ohms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 13 ns
    Turn-On Delay Time 10 ns
    Channel-Mode Enhancement
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download STQ2HNK60ZR-AP
  • Chipdatas Part: CD93-STQ2HNK60ZR-AP
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/07/02 07:42 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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