Description

The TN28F010-90 is a 1024K (128K X 8) CMOS flash memory chip. It is a cost-effective and reliable alternative for read/write random access nonvolatile memory. This chip combines EPROM technology with electrical chip-erasure and reprogramming, allowing memory contents to be rewritten in various scenarios. The TN28F010-90 offers increased memory flexibility, contributing to time and cost savings.

Specifications and features

- Flash Electrical Chip-Erase in 1 Second Typical

- Quick-Pulse Programming Algorithm: 10 µs Typical Byte-Program, 2 Second Chip-Program

- 100,000 Erase/Program Cycles

- 12.0 V ±5% VPP

- High-Performance Read: 90 ns Maximum Access Time

- CMOS Low Power Consumption: 10 mA Typical Active Current, 50 µA Typical Standby Current, 0 Watts Data Retention Power

- Integrated Program/Erase Stop Timer

- Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

- Noise Immunity Features: ±10% VCC Tolerance, Maximum Latch-Up Immunity through EPI Processing

- ETOX™ Nonvolatile Flash Technology: EPROM-Compatible Process Base, High-Volume Manufacturing Experience

- JEDEC-Standard Pinouts: 32-Pin Plastic Dip, 32-Lead PLCC, 32-Lead TSOP

- Extended Temperature Options

Application Scenarios

The TN28F010-90 can be used in various applications requiring CMOS flash memory. Some potential scenarios include:

• Consumer electronics
• Automotive systems
• Embedded systems
• Industrial automation

Comparison

Advantages and disadvantages of the TN28F010-90:

• Cost-effective
• Reliable
• Flexible memory rewriting
• Contributes to time and cost savings
• High-Performance Read capabilities
• Low power consumption
• Noise immunity features

• None identified