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S29GL01GP11FFCR20 - Brand New Cypress Semiconductor Memory - Datasheet - Chipdatas

S29GL01GP11FFCR20 - Brand New Cypress Semiconductor Memory

In Stock:1200 ,Ready for Immediate Shipping
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In Stock: 1200, Ready for Immediate Shipping
Category:Memory
Chipdatas Part No.:CD94-S29GL01GP11FFCR20
Manufacturer Part No.:S29GL01GP11FFCR20
Datecode:09+
Package:64-LBGA
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  • Description

    Electronic Component Model: S29GL01GP11FFCR20 is a Memory product with a capacity of 1 Gigabit, 512 Megabit, 256 Megabit, and 128 Megabit. It operates at 3.0 Volts and utilizes the 90nm MirrorBit Process Technology. This flash memory device offers a fast page access time of 25 ns and a random access time as fast as 90 ns. It features a Write Buffer that allows for faster programming time and is ideal for embedded applications that require higher density, better performance, and lower power consumption.

    Specifications and Features

    - Single 3V read/program/erase (2.7-3.6 V)

    - Enhanced VersatileI/O™ control

    - 90nm MirrorBit process technology

    - 8-word/16-byte page read buffer

    - 32-word/64-byte write buffer reduces programming time for multiple-word updates

    - Secured Silicon Sector region

    - Uniform 64 Kword/128 Kbyte Sector Architecture

    - 100,000 erase cycles per sector typical

    - 20-year data retention typical

    - Offered Packages: 56-pin TSOP, 64-ball Fortified BGA

    - Support for CFI (Common Flash Interface)

    - Persistent and Password methods of Advanced Sector Protection

    - WP#/ACC input

    - Hardware reset input (RESET#)

    - Ready/Busy# output (RY/BY#) detects program or erase cycle completion

    Application Scenarios

    This flash memory device is suitable for a wide range of applications, including but not limited to:

    - Embedded systems

    - Data storage devices

    - Consumer electronics

    - Industrial equipment

    Comparison

    Advantages:

    - Fast page access and random access times

    - Write buffer for faster programming

    - Suitable for high-density applications

    - Better performance and lower power consumption

    Disadvantages:

    - Limited capacity options

  • Similar parts: 9920 , Click to view
    Attributes Value
    Category Memory
    Manufacturer Cypress Semiconductor
    Product Category Memory ICs
    Series GL-P
    Packaging Tray
    Unit-Weight 0.006004 oz
    Mounting-Style SMD/SMT
    Operating-Temperature-Range 0 C to + 85 C
    Package-Case BGA-64
    Operating-Temperature 0°C ~ 85°C (TA)
    Interface Parallel
    Voltage-Supply 3 V ~ 3.6 V
    Supplier-Device-Package 64-Fortified BGA (13x11)
    Memory Capacity 1G (128M x 8)
    Memory-Type FLASH - NOR
    Speed 110ns
    Architecture Sector
    Format-Memory FLASH
    Interface-Type Parallel
    Organization 128 M x 8
    Supply-Current-Max 110 mA
    Data-Bus-Width 8 bit
    Supply-Voltage-Max 3.6 V
    Supply-Voltage-Min 2.7 V
    Timing-Type Asynchronous
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Additional Information
  • Datasheet: Download S29GL01GP11FFCR20
  • Chipdatas Part: CD94-S29GL01GP11FFCR20
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 10:57 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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