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Description
The IS42S32200B-6TL is a 64Mb SDRAM electronic component designed for high-speed CMOS operations in 3.3V memory systems. It contains 67,108,864 bits and is internally configured as a quad-bank DRAM with a synchronous interface. Each bank is organized as 2,048 rows by 256 columns by 32 bits. The component features an AUTO REFRESH MODE and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. Additionally, all inputs and outputs are LVTTL compatible.
Specifications and Features
- Clock frequency: 166, 143 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access/precharge
- Single 3.3V power supply
- LVTTL interface
- Programmable burst length: (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- Self refresh modes
- 4096 refresh cycles every 64 ms
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
- Industrial temperature availability
- Package 400-mil 86-pin TSOP II
- Lead free package is available
Application Scenarios
The IS42S32200B-6TL is suitable for use in memory systems requiring high-speed CMOS operations. It can be used in various electronic devices and applications that rely on dynamic random-access memory.
Comparison
- Advantages
- High-speed CMOS operations
- Quad-bank DRAM configuration
- Synchronous interface
- Power-saving modes
- LVTTL compatibility
- Wide range of programmable features
- Industrial temperature availability
- Disadvantages
- None identified
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download IS42S32200B-6TL
- Chipdatas Part: CD87-IS42S32200B-6TL
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 18:27 +0800
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- Full or Partial Refund , If the item is not as described
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