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FQB8N60CFTM - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQB8N60CFTM - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:18933 ,Ready for Immediate Shipping
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In Stock: 18933, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD86-FQB8N60CFTM
Manufacturer Part No.:FQB8N60CFTM
Datecode:09+
Package:TO-263-3, D²Pak 2 Leads + Tab, TO-263AB
$0.60106 /PCS Each contains 0 PCS
≥1:
$0.60106
≥10:
$0.59504
≥50:
$0.58903
≥100:
$0.57100
Numbers (PCS) :
  • Description

    The FQB8N60CFTM is a power MOSFET transistor designed for use in high-efficiency power supplies and electronic ballasts. This N-Channel enhancement mode transistor employs Fairchild's proprietary planar stripe DMOS technology that provides superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.

    Specifications and features

    • Product Category: Field Effect Tube (MOSFET)
    • Maximum Drain Current: 6.26A
    • Maximum Voltage: 600V
    • On-state Resistance: 1.5Ω at VGS=10V
    • Gate Charge: 28nC (typical)
    • Crss: 12pF (typical)
    • Fast Switching
    • 100% avalanche tested
    • Improved dv/dt capability

    Application Scenarios

    The FQB8N60CFTM is ideal for applications in high-efficiency switched-mode power supplies and electronic lamp ballasts based on a half-bridge topology. The transistor's superior switching performance and energy pulse withstand capability make it perfect for these high-power applications.

    Comparison

    Advantages
    • Low On-state Resistance
    • Low Gate Charge
    • High Energy Pulse Withstand Capability
    • Fast Switching Times
    Disadvantages

    No apparent disadvantages were found for this transistor model.

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ON Semiconductor
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series FRFET?
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 600V
    Current-Continuous-Drain-Id-25°C 6.26A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 10V
    Vgs-th-Max-Id 4V @ 250?A
    Gate-Charge-Qg-Max-Vgs 36nC @ 10V
    Vgs-Max ±30V
    Input-Capacitance-Ciss-Max-Vds 1255pF @ 25V
    FET-Feature -
    Power-Dissipation-Max 147W (Tc)
    Rds-On-Max-Id-Vgs 1.5 Ohm @ 3.13A, 10V
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package D?PAK (TO-263AB)
    Package-Case TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
  • Latest 5 Reviews
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  • Shopping guide

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Additional Information
  • Datasheet: Download FQB8N60CFTM
  • Chipdatas Part: CD86-FQB8N60CFTM
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 16:16 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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