FQB8N60CFTM - Brand New onsemi Field Effect Tube (MOSFET)
In Stock:18933 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
18933,
Ready for Immediate Shipping
Brand:onsemi
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD86-FQB8N60CFTM
Manufacturer Part No.:FQB8N60CFTM
Datecode:09+
Package:TO-263-3, D²Pak 2 Leads + Tab, TO-263AB
$0.60106 /PCS
Each contains 0 PCS
≥1:
$0.60106
≥10:
$0.59504
≥50:
$0.58903
≥100:
$0.57100
-
Description
The FQB8N60CFTM is a power MOSFET transistor designed for use in high-efficiency power supplies and electronic ballasts. This N-Channel enhancement mode transistor employs Fairchild's proprietary planar stripe DMOS technology that provides superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
Specifications and features
- Product Category: Field Effect Tube (MOSFET)
- Maximum Drain Current: 6.26A
- Maximum Voltage: 600V
- On-state Resistance: 1.5Ω at VGS=10V
- Gate Charge: 28nC (typical)
- Crss: 12pF (typical)
- Fast Switching
- 100% avalanche tested
- Improved dv/dt capability
Application Scenarios
The FQB8N60CFTM is ideal for applications in high-efficiency switched-mode power supplies and electronic lamp ballasts based on a half-bridge topology. The transistor's superior switching performance and energy pulse withstand capability make it perfect for these high-power applications.
Comparison
Advantages- Low On-state Resistance
- Low Gate Charge
- High Energy Pulse Withstand Capability
- Fast Switching Times
DisadvantagesNo apparent disadvantages were found for this transistor model.
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download FQB8N60CFTM
- Chipdatas Part: CD86-FQB8N60CFTM
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 16:16 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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