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STH3N150-2 - Brand New STMicroelectronics Field Effect Tube (MOSFET) - Datasheet - Chipdatas

STH3N150-2 - Brand New STMicroelectronics Field Effect Tube (MOSFET)

In Stock:8451 ,Ready for Immediate Shipping
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In Stock: 8451, Ready for Immediate Shipping
Chipdatas Part No.:CD86-STH3N150-2
Manufacturer Part No.:STH3N150-2
Datecode:09+
Package:TO-263-3, D²Pak 2 Leads + Tab Variant
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  • Description

    This article introduces the electronic component model STH3N150-2, which is a type of N-channel enhancement mode Power MOSFET produced by STMicroelectronics. It is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

    Specifications and features

    The STH3N150-2 MOSFET has been designed for automotive applications and is AEC-Q101 qualified. It also has reduced conduction losses, low profile, very low parasitic inductance and a high current package.

    Application Scenarios

    This MOSFET is suitable for switching applications.

    Comparison

    Advantages
    • Designed for automotive applications and AEC-Q101 qualified
    • Reduces conduction losses
    • Low profile with very low parasitic inductance
    • High current package
    Disadvantages
    • May not be suitable for non-automotive applications
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer STMicroelectronics
    Product Category FETs - Single
    Series N-channel MDmesh
    Packaging Reel
    Unit-Weight 0.139332 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 140 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 50 C
    Fall-Time 61 ns
    Rise-Time 47 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 2.5 A
    Vds-Drain-Source-Breakdown-Voltage 1500 V
    Vgs-th-Gate-Source-Threshold-Voltage 4 V
    Rds-On-Drain-Source-Resistance 9 Ohms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 45 ns
    Turn-On Delay Time 24 ns
    Qg-Gate-Charge 29.3 nC
    Transconductance 2.6 S
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download STH3N150-2
  • Chipdatas Part: CD86-STH3N150-2
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 17:35 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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