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Description
This document contains the specifications for the Intel® Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in different combinations, including 32-Mbit flash + 8-Mbit SRAM, 32-Mbit flash + 4-Mbit SRAM, 16-Mbit flash + 4-Mbit SRAM, and 16-Mbit flash memory + 2-Mbit SRAM.
Specifications and features
The C3 SCSP device combines flash memory and SRAM into a single package, providing secure low-voltage memory solutions for portable applications. The flash memory offers enhanced security, instant locking/unlocking of any flash block with zero-latency, a 128-bit protection register for unique device identification, and improved 12V production programming for increased factory throughput.
The product features of the C3 SCSP device include:
- Flash Memory Plus SRAM, reducing memory board space required and simplifying PCB design complexity
- SCSP Technology:
- Smallest memory subsystem footprint
- Area: 8 x 10 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM
- Area: 8 x 12 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit or 8 Mbit SRAM
- Height: 1.20 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM, and 32 Mbit (0.13 µm) Flash + 8 Mbit SRAM
- Height: 1.40 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit SRAM
- This family also includes 0.25 µm, 0.18 µm, and 0.13 µm technologies
- Advanced SRAM Technology:
- 70 ns Access Time
- Low Power Operation
- Low Voltage Data Retention Mode
- Intel® Flash Data Integrator (FDI) Software:
- Real-Time Data Storage and Code Execution in the Same Memory Device
- Full Flash File Manager Capability
- Advanced+ Boot Block Flash Memory:
- 70 ns Access Time
- Instant, Individual Block Locking
- 128-bit Protection Register
- 12 V Production Programming
- Fast Program and Erase Suspend
- Extended Temperature –25 °C to +85 °C
- Blocking Architecture:
- Block Sizes for Code + Data Storage
- 4-Kword Parameter Blocks
- 64-Kbyte Main Blocks
- 100,000 Erase Cycles per Block
- Low Power Operation:
- Asynchronous Read Current: 9 mA (Flash)
- Standby Current: 7 µA (Flash)
- Automatic Power Saving Mode
- Flash Technologies:
- 0.25 µm ETOX™ VI, 0.18 µm ETOX™ VII, and 0.13 µm ETOX™ VIII Flash Technologies
Application Scenarios
The C3 SCSP device is suitable for various portable applications that require secure low-voltage memory solutions. It can be used in smartphones, tablets, wearable devices, and other portable electronic devices.
Comparison
Advantages- Flash memory plus SRAM reduces memory board space and simplifies PCB design complexity
- Smallest memory subsystem footprint
- Enhanced security with instant locking/unlocking of any flash block
- 128-bit protection register for unique device identification
- Improved 12V production programming for increased factory throughput
- Advanced SRAM technology with low access time and low power operation
- Intel® Flash Data Integrator (FDI) software for real-time data storage and code execution
- Advanced+ boot block flash memory with fast program and erase suspend
- Blocking architecture with block sizes for code + data storage
- Low power operation with automatic power saving mode
- Flash technologies available in different technologies (0.25 µm, 0.18 µm, 0.13 µm)
Disadvantages- None identified
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Datasheet
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Shopping guide
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- Last Updated: 2024/10/01 07:55 +0800
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