Description

This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.

Specifications and features

- Product Category: IC Chips
- Standard 26 pin SOJ, 26 pin TSOP(II)
- Single 3.3V±0.3V supply
- Low stand-by power dissipation: CMOS lnput level 1.8mW(Max), CMOS lnput level 180µW(Max)
- Low operating power dissipation: M5M4V4405Cxx-6, -6S 288.0mW (Max), M5M4V4405Cxx-7, -7S 252.0mW (Max)
- Self refresh capability: Self refresh current 100µA(max)
- Extended refresh capability: Extended refresh current 100µA(max)
- Hyper-page mode (1024-bit random access), Read-modify-write, RAS-only refresh, CAS before RAS refresh, Hidden refresh, CBR self-refresh(-6S,-7S) capabilities.
- Early-write mode and OE and W to control output buffer impedance
- 1024 refresh cycles every 16.4ms (A0~A9)
- 1024 refresh cycles every 128ms (A0~A9)
- Applicable to self refresh version (M5M4V4405Cxx-6S,-7S: option) only

Application Scenarios

- Laptop personal computer
- Solid-state disc
- Microcomputer memory
- Refresh memory for CRT