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FDD6N50FTM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FDD6N50FTM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

In Stock:22653 ,Ready for Immediate Shipping
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In Stock: 22653, Ready for Immediate Shipping
Chipdatas Part No.:CD93-FDD6N50FTM
Manufacturer Part No.:FDD6N50FTM
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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  • Description

    These N-Channel enhancement mode power field effect transistors are produced using Failchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

    Specifications and features

    • RDS(on) = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A
    • Low gate charge ( Typ. 15nC)
    • Low Crss ( Typ. 6.3pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability
    • RoHS compliant

    Application Scenarios

    These N-Channel enhancement mode power field effect transistors are well suited for high efficient switched mode power supplies and active power factor correction.

    Comparison

    Advantages:

    • Minimized on-state resistance

    • Superior switching performance

    • Withstands high energy pulse in the avalanche and commutation mode

    • Suitable for high efficient switched mode power supplies

    • Suitable for active power factor correction

    Disadvantages:

    • None mentioned

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Single
    Packaging Reel
    Unit-Weight 0.009184 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 89 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 20.5 ns
    Rise-Time 28.3 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 5.5 A
    Vds-Drain-Source-Breakdown-Voltage 500 V
    Rds-On-Drain-Source-Resistance 1.15 Ohms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 33.4 ns
    Turn-On Delay Time 17 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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    Within 30 days from date of shipment. View more

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Additional Information
  • Datasheet: Download FDD6N50FTM
  • Chipdatas Part: CD93-FDD6N50FTM
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 19:38 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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