Description

SM324QF BC is a 128 Mb Mobile Synchronous DRAM designed to provide high-speed data transfer using pipeline architecture. This IC chip offers burst-oriented write and read access to the SDRAM, which is fully synchronous. The internal bank feature hides the row access and precharge, and the CAS latency is programmable as 2 or 3. The chip has a programmable Burst Length, which can be 1, 2, 4, 8, and Full Page, and the burst sequence can be sequential and interleave. TCSR (Temperature Compensated Self Refresh) and PASR (Partial Arrays Self Refresh) are other salient features of this IC chip. SM324QF BC is also equipped with Deep Power Down Mode (DPD) and Driver Strength Control (DS): 1/4, 1/2, and Full. The chip offers an industrial grade TSOP and BGA packages and is an ideal choice for low-power applications.

Specifications and Features

• Pipeline architecture
• Fully synchronous with positive clock edge
• Internal bank for hiding row access and precharge
• Programmable CAS latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8, and Full Page
• Programmable Burst Sequence: Sequential and Interleave
• Auto Refresh (CBR)
• TCSR (Temperature Compensated Self Refresh)
• PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
• Deep Power Down Mode (DPD)
• Driver Strength Control (DS): 1/4, 1/2, and Full
• Industrial grade TSOP and BGA packages

Application Scenarios

SM324QF BC is designed for low-power applications, making it an ideal choice for mobile devices or other devices with the same power consumption requirements. Besides, its industrial-grade packages make it suitable for use in different industrial settings.

Comparison

• High-speed data transfer
• Programmable burst length
• Industrial-grade packages

• May not be suitable for high-performance devices