SQD35N05-26L-GE3 - Brand New VISHAY Field Effect Tube (MOSFET)
In Stock:1983 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
1983,
Ready for Immediate Shipping
Brand:VISHAY
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD91-SQD35N05-26L-GE3
Manufacturer Part No.:SQD35N05-26L-GE3
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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Description
Electronic Component Model SQD35N05-26L-GE3 is a power transistor module consisting of a high-speed, high-power Darlington transistor with a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated, making heatsink construction simple. It has a low saturation voltage and a high DC current gain hFE.
Specifications and Features
- IC = 300A, VCEX = 400/600V
- Low saturation voltage for higher efficiency
- High DC current gain hFE
- Isolated mounting base
- VEBO 10V for faster switching speed
Application Scenarios
SQD35N05-26L-GE3 is ideal for various applications such as motor control (VVVF), AC/DC servo, UPS, switching power supply, and ultrasonic applications.
Comparison
Advantages- High-speed and high-power Darlington transistor
- Reverse parallel fast recovery diode
- Isolated mounting base for simple heatsink construction
- Low saturation voltage for higher efficiency
- High DC current gain hFE
DisadvantagesNo apparent disadvantages identified.
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download SQD35N05-26L-GE3
- Chipdatas Part: CD91-SQD35N05-26L-GE3
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 14:12 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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