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IXKH70N60C5 - Brand New IXYS Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IXKH70N60C5 - Brand New IXYS Field Effect Tube (MOSFET)

In Stock:6961 ,Ready for Immediate Shipping
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In Stock: 6961, Ready for Immediate Shipping
Brand:IXYS
Chipdatas Part No.:CD93-IXKH70N60C5
Manufacturer Part No.:IXKH70N60C5
Datecode:09+
Package:TO-247
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  • Description

    Electronic Component Model: IXKH70N60C5 is a field effect tube (MOSFET) that belongs to the N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge category. It is a fast COOLMOS®* power MOSFET of the 4th generation with high blocking capability and lowest resistance. It is avalanche rated for unclamped inductive switching (UIS) and has low thermal resistance due to reduced chip thickness. It also offers enhanced total power density.

    Specifications and features

    - N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

    - Fast COOLMOS®* power MOSFET 4th generation

    - High blocking capability

    - Lowest resistance

    - Avalanche rated for unclamped inductive switching (UIS)

    - Low thermal resistance due to reduced chip thickness

    - Enhanced total power density

    Application Scenarios

    - Switched mode power supplies(SMPS)

    - Uninterruptible power supplies (UPS)

    - Power factor correction (PFC)

    - Welding

    - Inductive heating

    - PDP and LCD adapter

    Comparison

    Advantages
    None
    Disadvantages
    None
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IXYS
    Product Category FETs - Single
    Series CoolMOS™
    Packaging Tube
    Unit-Weight 0.229281 oz
    Mounting-Style Through Hole
    Tradename COOLMOS
    Package-Case TO-247-3
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-247AD (IXKH)
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max -
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 600V
    Input Capacitance 6800pF @ 100V
    FET-Feature Super Junction
    Current-Continuous-Drain-Id-25°C 70A (Tc)
    Rds-On-Max-Id-Vgs 45 mOhm @ 44A, 10V
    Vgs-th-Max-Id 3.5V @ 3mA
    Gate-Charge-Qg-Vgs 190nC @ 10V
    Pd-Power-Dissipation 625 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 10 ns
    Rise-Time 20 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 70 A
    Vds-Drain-Source-Breakdown-Voltage 600 V
    Vgs-th-Gate-Source-Threshold-Voltage 3.5 V
    Rds-On-Drain-Source-Resistance 45 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 100 ns
    Turn-On Delay Time 30 ns
    Qg-Gate-Charge 17 uC
    Channel-Mode Enhancement
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
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    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download IXKH70N60C5
  • Chipdatas Part: CD93-IXKH70N60C5
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 20:36 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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