Description

The MAT02AH is a dual NPN monolithic transistor designed to provide very low noise, low drift, and low rBE. The transistor maintains a high current gain (hFE) over a wide range of collector current and has a low offset voltage and noise voltage. It is manufactured using Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process, which stabilizes the essential device parameters over wide temperature and elapsed time ranges. The component is available in die form and is an improved direct replacement for LM194/394.

Specifications and Features

• Product Category: IC Chips
• Design: NPN dual monolithic transistors optimized for low noise, low drift, and low rBE
• Process Technology: Silicon Nitride “Triple Passivation”
• Current gain (hFE): 500 min at IC= 1 mA, 300 min at IC= 1 mA
• Low Offset Voltage: 50 mV max
• Noise Voltage (100 Hz, 1 mA): 1.0 nV/√Hz max
• Log Conformance: rBE ≤ 0.3 V
• Low Offset Voltage Drift: 0.1 mV/°C max
• Availability: Die form

Application Scenarios

The MAT02AH can be used in various applications that require low noise and drift, such as audio amplifiers, instrumentation amplifiers, and signal conditioning circuits.

Comparison

• Very low noise and drift
• Low offset voltage and noise voltage
• High current gain maintained over wide range of collector current
• The Silicon Nitride “Triple Passivation” process stabilizes device parameters over wide temperature and elapsed time ranges

• Not suitable for high power applications