SI4423DY-T1-E3 - Brand New ROHM Field Effect Tube (MOSFET)
In Stock:7728 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
7728,
Ready for Immediate Shipping
Brand:ROHM
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD94-SI4423DY-T1-E3
Manufacturer Part No.:SI4423DY-T1-E3
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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Description
This N-channel HEXFET® power MOSFET, model SI4423DY-T1-E3, is produced using International Rectifiers advanced HEXFET power MOSFET technology. It is designed for low voltage or battery driven power conversion applications. The device features low on-resistance and low gate charge, making it highly efficient for various applications. The SO-8 package with copper leadframe offers enhanced thermal characteristics, allowing power dissipation of greater than 800mW in typical board mount applications.
Specifications and features
- N-Channel MOSFET
- Low On-Resistance
- Low Gate Charge
- Surface Mount
- Logic Level Drive
Application Scenarios
The SI4423DY-T1-E3 MOSFET is widely used in various applications, including low voltage power conversion circuits, battery-driven devices, and other electronics that require high efficiency and low power consumption.
Comparison
Advantages- Low on-resistance for efficient power conversion
- Low gate charge for improved performance
- Surface mount design for easy installation
- Logic level drive for compatibility with different systems
Disadvantages- May not be suitable for high voltage applications
- Limited power dissipation capabilities in certain conditions
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Additional Information
- Datasheet: Download SI4423DY-T1-E3
- Chipdatas Part: CD94-SI4423DY-T1-E3
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/30 07:22 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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