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SI7469DP-T1-E3 - Brand New ROHM Field Effect Tube (MOSFET) - Datasheet - Chipdatas

SI7469DP-T1-E3 - Brand New ROHM Field Effect Tube (MOSFET)

In Stock:10750 ,Ready for Immediate Shipping
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In Stock: 10750, Ready for Immediate Shipping
Brand:ROHM
Chipdatas Part No.:CD94-SI7469DP-T1-E3
Manufacturer Part No.:SI7469DP-T1-E3
Datecode:09+
Package:PowerPAK® SO-8
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  • Description

    The SI7469DP-T1-E3 is a field effect tube (MOSFET) electronic component model.

    Specifications and features

    This electronic component model belongs to the field effect tube category, specifically MOSFET. It is designed to provide efficient and reliable performance in various applications.

    Application Scenarios

    The SI7469DP-T1-E3 is suitable for use in a wide range of applications, including power management, motor control, and lighting systems.

    Comparison

    When compared to other similar electronic component models, the SI7469DP-T1-E3 offers advantages such as high power efficiency, low on-resistance, and excellent thermal performance. However, it may have limitations in certain extreme operating conditions.

    Advantages

    - High power efficiency

    - Low on-resistance

    - Excellent thermal performance

    Disadvantages

    - Limitations in extreme operating conditions

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ROHM
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI7469DP-E3
    Unit-Weight 0.017870 oz
    Mounting-Style SMD/SMT
    Package-Case PowerPAKR SO-8
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package PowerPAKR SO-8
    Configuration Single
    FET-Type MOSFET P-Channel, Metal Oxide
    Power-Max 83W
    Transistor-Type 1 P-Channel
    VDSS – Drain-Source Voltage 80V
    Input Capacitance 4700pF @ 40V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 28A (Tc)
    Rds-On-Max-Id-Vgs 25 mOhm @ 10.2A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 160nC @ 10V
    Pd-Power-Dissipation 83 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 110 ns
    Rise-Time 220 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 28 A
    Vds-Drain-Source-Breakdown-Voltage - 80 V
    Rds-On-Drain-Source-Resistance 25 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 105 ns
    Turn-On Delay Time 45 ns
    Transconductance 52 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    • - View in your order page
    Shipping option:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Contact us
Additional Information
  • Datasheet: Download SI7469DP-T1-E3
  • Chipdatas Part: CD94-SI7469DP-T1-E3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/30 07:24 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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