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Description
The PTB20148 is a class AB, NPN, common emitter RF power transistor designed for 25 Vdc operation from 925 to 960 MHz. It has a minimum output power of 60 watts and can be used for both CW and PEP applications. This transistor utilizes ion implantation, nitride surface passivation, and gold metallization to ensure excellent device reliability. It also offers 100% lot traceability.
Specifications and features
- Power Output: 60 Watts
- Frequency Range: 925-960 MHz
- Operating Voltage: 25 Vdc
- Class: AB
- Collector Efficiency: 50% minimum at 60 Watts
- Metallization: Gold
- Passivation: Silicon Nitride
Application Scenarios
The PTB20148 RF power transistor can be used in various applications, such as:
- Communication systems
- RF amplification
- Wireless transmitters
- Radio frequency devices
Comparison
Advantages- Reliable device with excellent reliability
- 100% lot traceability
- High power output of 60 Watts
- Suitable for both CW and PEP applications
DisadvantagesNo specific disadvantages have been identified for the PTB20148 RF power transistor.
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
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How to Buy:
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Additional Information
- Datasheet: Download PTB20148
- Chipdatas Part: CD86-PTB20148
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 13:41 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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The fee is charged according to the rule of PayPal.
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We recommend to use bank transfer for large orders to save on handling fees.
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