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SI3483CDV-T1-GE3 - Brand New VISHAY Field Effect Tube (MOSFET) - Datasheet - Chipdatas

SI3483CDV-T1-GE3 - Brand New VISHAY Field Effect Tube (MOSFET)

In Stock:48000 ,Ready for Immediate Shipping
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In Stock: 48000, Ready for Immediate Shipping
Brand:VISHAY
Chipdatas Part No.:CD92-SI3483CDV-T1-GE3
Manufacturer Part No.:SI3483CDV-T1-GE3
Datecode:09+
Package:TSOP-6
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  • Description

    SI3483CDV-T1-GE3 is an N-channel MOSFET transistor, which belongs to the Vishay Siliconix Power MOSFETs category. It is mainly designed for use in power management and battery protection circuits.

    Specifications and features

    - VDS (max): 30V - ID (max): 12A - RDS(on) (max) @ VGS = 10V: 7.5 mΩ - Qg (typ) @ VGS = 10V: 7.6 nC - Power Dissipation (max): 2.5W - Operating temperature range: -55°C to +175°C - Package/Case: PowerPAK 1212-8

    Application Scenarios

    SI3483CDV-T1-GE3 can be used in the following applications: - Power management circuits - Battery protection circuits - DC-DC Converters - Load switch applications - LED lighting applications

    Comparison

    Advantages: - High continuous drain current - Low RDS(on) resistance - Fast switching speed - Low input capacitance - High power dissipation Disadvantages: - Relatively high cost - Requires additional circuitry for optimum performance in some applications.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer VISHAY
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI3483CDV-GE3
    Unit-Weight 0.000705 oz
    Mounting-Style SMD/SMT
    Package-Case SOT-23-6 Thin, TSOT-23-6
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package 6-TSOP
    Configuration Single
    FET-Type MOSFET P-Channel, Metal Oxide
    Power-Max 4.2W
    Transistor-Type 1 P-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 1000pF @ 15V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 8A (Tc)
    Rds-On-Max-Id-Vgs 34 mOhm @ 6.1A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 33nC @ 10V
    Pd-Power-Dissipation 2 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 15 ns 10 ns
    Rise-Time 135 ns 15 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 6.1 A
    Vds-Drain-Source-Breakdown-Voltage - 30 V
    Rds-On-Drain-Source-Resistance 34 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 25 ns 30 ns
    Turn-On Delay Time 45 ns 10 ns
    Channel-Mode Enhancement
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  • Shopping guide

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Additional Information
  • Datasheet: Download SI3483CDV-T1-GE3
  • Chipdatas Part: CD92-SI3483CDV-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/05/20 11:32 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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