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AT-31011-TR1 - Brand New Atmel RF Transistors (BJT) - Datasheet - Chipdatas

AT-31011-TR1 - Brand New Atmel RF Transistors (BJT)

In Stock:18233 ,Ready for Immediate Shipping
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In Stock: 18233, Ready for Immediate Shipping
Brand:Atmel
Chipdatas Part No.:CD89-AT-31011-TR1
Manufacturer Part No.:AT-31011-TR1
Datecode:09+
Package:TO-253-4, TO-253AA
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  • Description

    Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.
    The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.
    Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.
    The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self- alignment techniques, and gold metalization in the fabrication of these devices.

    Features

    • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
    • 900 MHz Performance:
    AT-31011: 0.9 dB NF, 13 dB GA
    AT-31033: 0.9 dB NF, 11 dB GA
    • Characterized for End-Of Life Battery Use (2.7 V)
    • SOT-143 SMT Plastic Package
    • Tape-And-Reel Packaging Option Available[1]

  • Similar parts: 819 , Click to view
    Attributes Value
    Category RF Transistors (BJT)
    Manufacturer Atmel
    Product Category RF Transistors (BJT)
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Additional Information
  • Datasheet: Download AT-31011-TR1
  • Chipdatas Part: CD89-AT-31011-TR1
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
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  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/28 19:19 +0800
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