Description

Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.

Specifications and features

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
• Characterized for End-Of Life Battery Use (2.7 V)
• SOT-143 SMT Plastic Package
• Tape-And-Reel Packaging Option Available[1]

Application Scenarios

Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. They are suitable for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery-operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. In addition, they can be used in 900 MHz pager applications.

Comparison

The AT-31011 and AT-31033 transistors offer high performance and optimized operation at low voltages. They have a 3.2 micron emitter-to-emitter pitch and reduced parasitic design, resulting in extremely high performance products. These transistors have moderate output power capability and an excellent noise figure, providing high dynamic range for microcurrent devices. The AT-31011 uses the 4 lead SOT-143 package, while the AT-31033 uses the 3 lead SOT-23 package. Both packages are industry standards compatible with high volume surface mount assembly techniques. The AT-31011 and AT-31033 transistors are fabricated using Hewlett-Packard’s optimized SAT process, which ensures device uniformity, performance, and reliability.

- Optimized for operation at low voltages
- Extremely high performance
- Suitable for various applications
- Moderate output power capability
- Excellent noise figure
- High gain capability

- No specific disadvantages mentioned