Description

The SST29EE010-90-3C-EH is a 128K x 8 CMOS page mode EEPROM manufactured by SST using their proprietary SuperFlash technology. It features a split gate cell design and thick oxide tunneling injector for improved reliability and manufacturability. This electronic component supports single voltage read and write operations, with different voltage requirements for each variant: 5.0V for the 29EE010, 3.0V for the 29LE010, and 2.7V for the 29VE010. It offers superior endurance, low power consumption, fast page-write operation, and fast read access time. The SST29EE010-90-3C-EH also has latched address and data, automatic write timing, and hardware and software data protection. It is compatible with TTL I/O and adheres to JEDEC standard byte-wide EEPROM pinouts.

Specifications and Features

• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EEPROM Pinouts
• Packages Available: 32-Pin TSOP (8x20 & 8x14 mm), 32-Lead PLCC, 32 Pin Plastic DIP

Application Scenarios

The SST29EE010-90-3C-EH can be used in various electronic devices and applications that require non-volatile data storage. Its low power consumption makes it suitable for battery-powered devices. The fast read access time and fast page-write operation make it ideal for applications that require efficient data storage and retrieval. The hardware and software data protection features provide added security for critical data.

Comparison

• High performance CMOS SuperFlash technology
• Superior reliability and manufacturability
• Supports single voltage read and write operations
• Low power consumption
• Fast page-write operation
• Fast read access time
• Hardware and software data protection
• TTL I/O compatibility

• Requires different voltage levels for different variants